Structure of the Al0.27Ga0.73N/GaN diode under study. | Download Scientific Diagram
![PDF] Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/126c4ef2cf4ecc06a1440b820f0a7641a6220b9e/3-Figure4-1.png "PDF] Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers | Semantic Scholar")
PDF] Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers | Semantic Scholar
GaN Power Converters | Ferdinand-Braun-Institut
GaN nanoscale vacuum electron diode (NVED). (a) Device geometry for GaN... | Download Scientific Diagram
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
PTC Website
Panasonic Develops GaN Diodes with High Current Operations and a Low Turn-on Voltage | Business Wire
Conductivity Modulation in Vertical GaN PiN Diode - News
Typical current-voltage characteristics of the Au/n-GaN diode at room... | Download Scientific Diagram
Grown on silicon: blue–violet InGaN laser diode operates at r...
GaN-Based Schottky Diode | IntechOpen
Micromachines | Free Full-Text | GaN JBS Diode Device Performance Prediction Method Based on Neural Network
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
Gallium nitride vertical junction barrier Schottky diodes
Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure | ACS Nano
Review of Recent Progress on Vertical GaN-Based PN Diodes | Discover Nano
High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma based edge termination
Fully vertical gallium nitride p-i-n diode grown on silicon substrate
Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition | ACS Applied Materials & Interfaces
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)
